| abstract |
Disclosed are a substrate processing method and a substrate processing apparatus, which are capable of forming a high dielectric film by a sputtering method within one same vacuum chamber, said high dielectric film being that is reduced in oxygen defects and traps by hot carriers. A substrate processing method according to one embodiment of the present invention comprises: a first step wherein a substrate to be processed (102) arranged within a film-forming chamber (100) is heated, and a metal film is deposited on the substrate to be processed (102) by physical deposition using a target (106); and a second step wherein a gas containing an element that oxidizes the metal film is supplied into the film-forming chamber (100), and the metal film is oxidized within the chamber by thermal oxidation. |