| abstract |
The insulation breakdown voltage of a coating insulating film used in an element isolation region is improved. A coating film formed from a composition that is obtained by adding one or more kinds of compounds, which contains a different element M capable of forming an oxide in an amount of 0.5-11.1 mol% relative to the mole number of Si, to a compound represented by the following general formula: ((CH3)nSiO2-n/2)x(SiO2)1-x (wherein n = 1-3 and 0 = x = 1.0), is used as an insulating coating film that is used in an element isolation region. |