| abstract |
The present invention relates to etching solution compositions for transparent conductive film formed into fine pattern during manufacture of thin film transistors for flat panel liquid crystal displays. The compositions of the present invention comprise: 0.05 to 15 wt % of a halogen compound, 0.1 to 20 wt % of a secondary oxidant, 0.05 to 15 wt % of an etching adjustment agent, 0.1 to 15 wt % of a residue inhibitor, 0.3 to 10 wt % of a corrosion inhibitor, and balance water bringing total weight of the composition to 100 wt %. The compositions according to the present invention do not degrade copper film, copper alloy film, molybdenum film, molybdenum alloy film or laminations thereof. |