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publicationDate 2010-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2010053659-A1
titleOfInvention Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
abstract Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas from the Siemens reactor is used to form a feed gas and/or etching gas fed to the fluidized bed reactor.
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