| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c178b448586795ba2aab089c57ff3dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a611be82b72654424bb122d07871ab37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ce57187f33af83b66225950b3153640e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_942b5507e43faa778b6a4bdc0c59408a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4fbc0102086aa29ba25d4a582e3d589
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_371290089320f9469a0809aea17b2a22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a679463265e2d8778cdf0af362852e4e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2009-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dcc914814ede094b939aedfe9c03ffa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c5a0f0af340a6dcc3457c53c105264f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21b4216ec342ae2a17f04f45f35e408f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_466a4cbd3fdfdad47b221ee3cd60f875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb8b665cf0c8136a8e70980d7a5c482c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18102b684400bff2b085eab1ac16b377
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58a19d38b7f34bb1e684dce392ac6bc5 |
| publicationDate |
2010-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010045021-A2 |
| titleOfInvention |
Gapfill improvement with low etch rate dielectric liners |
| abstract |
A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012199306-A |
| priorityDate |
2008-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |