| abstract |
First, a resist film (102) is formed on a substrate (101) by using a resist material containing a monomer which is stable against acids and contains a halogen (fluorine) atom, a polymer which is stable against acids and contains fluorine, a polymer containing an acid-labile group, and a photoacid generator. Next, a pattern exposure is carried out by selectively irradiating the resist film (102) with exposure light, while arranging a liquid (103) on the resist film (102). Then, the pattern-exposed resist film (102) is developed, thereby forming a resist pattern (102b) from the resist film (102). |