| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b19d483d6817c9ea29fb221b0fd34671
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7676d4c9a8cb20dc483b3d5b7dcd3b80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f405bbd1042686ee2fc2603d46ac2c3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6515bc96781318b63507f9e95a1b7784
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94aade96d94102be386b3e57ea89301a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D21-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D17-00 |
| filingDate |
2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92a20ba0811d6990e8d1bfc0b2f9e14e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ece1a6d502bc01885e626bb0bf411abd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1090c46107619d9a9533d1185221b86b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5921c5a0754525cfd22baba25b39c0de |
| publicationDate |
2010-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010031215-A1 |
| titleOfInvention |
Method for substantially uniform copper deposition onto semiconductor wafer |
| abstract |
The methods practiced in an electrochemical deposition apparatus with two or more electrodes, described in earlier inventions, are disclosed. The methods produce uniform copper films with WFNU less than 2.5% on semiconductor wafers bearing a resistive copper seed layer with a thickness ranging from 50 to 9O0A in a copper sulfate based electrolyte whose conductivity is between 0.02 to 0.8S/cm. |
| priorityDate |
2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |