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filingDate 2009-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2010024387-A1
titleOfInvention Manufacturing method for metal oxide semiconductor material for gas sensor
abstract Provided is a manufacturing method for a metal oxide semiconductor material for gas sensors with which a metal oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. A precursor solution synthesis step (1) to synthesize an oxide precursor solution in which an oxide precursor is dispersed, a pH preparation step (3) to adjust the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step (5) to prepare an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed approximately uniformly, a cleaning step (7) to clean the oxide precursor-noble metal colloid dispersion and obtain a purified oxide precursor-noble metal colloid dispersion, and a freeze drying step (11) to freeze-dry the precipitate of the purified oxide precursor-noble metal colloid dispersion.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8529799-B2
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