http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010001352-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1964cbf5fb15d551a66153746dd75a32
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-20
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
filingDate 2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da12bab41f68412b152acd648d1b2330
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publicationDate 2010-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2010001352-A1
titleOfInvention Improved meander resistor
abstract The present invention relates in general to the field of integrated circuits, and more specifically to a meander resistor. Basically, a meander resistor can be considered as a bar resistor with the exception of the corner squares (right-angle bends). The Electrostatic Discharge (ESD) sensitivities of on-chip resistors can be a problem for both electronic manufactures and electronic component users. As others components, passive devices are known to be susceptible to ESD events. The context of this invention is to improve the reliability of the resistors during an ESD event. An ESD stress means that high current and high voltage levels are applied to the device. The device has to be able to dissipate this energy without failure.
priorityDate 2008-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
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Total number of triples: 23.