| abstract |
A method of forming a thin-film field-effect transistor comprising: forming a dielectric layer adjacent a gate; forming a source region and a drain region; and forming a semiconductor layer on the dielectric layer; wherein the semiconductor layer is deposited by spray pyrolysis and comprises a material selected from a group comprising: oxides; oxide-based materials; mixed oxides; metallic type oxides; group I-IV, II- VI, III- VI, IV-VI, V-VI and VIII- VI binary chalcogenides; and group I-II-VI, II-II-VI, H-III-VI, II- VI- VI and V- II- VI ternary chalcogenides. |