| abstract |
A method of resist treatment using a multiple patterning process, e.g., a double patterning process, is provided in which an ultrafine pattern with satisfactory precision is formed from a resist composition for first resist pattern formation. The method of resist treatment comprises: (1) applying a first resist composition comprising a resin (A) which has a group unstable to acids, is insoluble or sparingly soluble in aqueous alkali solutions, and can dissolve in aqueous alkali solutions by the action of an acid, a photo-acid generator (B), and a crosslinking agent (C) to a substrate; drying the coating to obtain a first resist film; subjecting the first resist film to prebake, exposure, post-exposure bake, and development; holding the resultant first resist pattern at a temperature lower than the glass transition point of the first resist composition for a given time and subsequently at a temperature not lower than the glass transition point for a given time to conduct hard bake; applying a second resist composition to this pattern; drying the coating to obtain a second resist film; and subjecting the second resist film to prebake, exposure, post-exposure bake, and development. |