| abstract |
Provided is a nano-wire field effect transistor which is characterized in that two columnar members made of a silicon crystal and constituting a nano-wire over a substrate are arranged vertically in parallel with the faces of the substrate. Also provided is a method of manufacturing the nano-wire field effect transistor, comprising a step of preparing an SOI substrate having a (100) plane azimuth, a step of working a silicon substrate forming an SOI layer, into a raised plate-shaped member having a rectangular section, a step of working the silicon crystal by a crystal anisotropy etching into the shape, in which two triangular columnar members are so vertically arranged at a spacing from each other as to face each other through the edge lines, and a step of hydrogen-annealing or thermally oxidizing the two triangular columnar members into a cylindrical shape to form the nano-wire. An integrated circuit including the nano-wire field effect transistor is also provided. |