| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b6f9b79b3d1293fa2caeb0fb22c0b54 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-824
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02601 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B38-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B38-08 |
| filingDate |
2009-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e1461cb0270adff6e62c8b0f8e124a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fa765567e89d41f8dfad14aefff52c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d658b1f10040692034af2ac068d3b209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcdcee4a90e4c34f91db1a4ecfbc0084 |
| publicationDate |
2009-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009148661-A1 |
| titleOfInvention |
Methods for forming particles from single source precursors, methods of forming semiconductor devices, and devices formed using such methods |
| abstract |
Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode. |
| priorityDate |
2008-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |