| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72d55ed16cdaa0385e42b43a94100aef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ffcb1c5f7249b8376b95f0964e5bbc16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9d2e411071a7dc86e7059d35f6914e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62f941494409aea84f621977c5f0ab81 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068 |
| filingDate |
2009-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdf58c365b76c5023b3d4d845742a216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd37614f8e2e8d7a3be6082b29090caf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e94ceab025aa2a5bc50c346e63f5b7b |
| publicationDate |
2009-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009140117-A2 |
| titleOfInvention |
Solar cell having a high quality rear surface spin-on dielectric layer |
| abstract |
A thin silicon solar cell having a high quality spin-on dielectric layer is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A first dielectric layer is applied to the rear surface of the silicon wafer using a spin-on process. A high temperature furnace operation provides simultaneous emitter diffusion and front and rear surface passivation. During this high temperature operation, the front emitter is formed, the rear spin-on dielectric layer is cured, and the front dielectric layer is thermally grown. Barrier layers are formed on the dielectric layers. Openings are made in the barrier layers. Contacts are formed in the openings and on the back surface barrier layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8962380-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011088114-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946547-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103618028-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103618028-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2521457-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921148-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013181298-A1 |
| priorityDate |
2008-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |