| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3e9dc586f5dff34c61782d97df964b75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6835 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-568 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B42D15-10 |
| filingDate |
2009-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91d166669820ca8151de26b2a6cc9de2 |
| publicationDate |
2009-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009131132-A1 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456187-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714358-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804098-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10109500-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10490420-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014346650-A1 |
| priorityDate |
2008-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |