| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6629bb2477f34e99ccbe50133c5ccbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ca8b0102f90ce9202607d587bbacc75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate |
2008-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42665637eb5cde42848db982eb07ba29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81b2bcdde0484629bc8f13af13966b37 |
| publicationDate |
2009-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009107241-A1 |
| titleOfInvention |
Multidot flash memory |
| abstract |
There is proposed a multidot flash memory as a randomly writable next generation file memory solving the problems of microfabrication and reliability. The multidot flash memory is provided with an active area, a floating gate that is arranged on the active area through a gate insulation film and has first and second side faces that are opposed to each other in a first direction, a word line arranged on the floating gate through an insulation film between electrodes, a first bit line that is arranged on the first side face of the floating gate through a first tunnel insulation film to extend in a second direction crossing the first direction, and a second bit line that is arranged on the second side face of the floating gate through a second tunnel insulation film to extend in the second direction. The width of the active area in the first direction is narrower than the width from the center of the first bit line to the center of the second bit line. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011040138-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8456908-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8633535-B2 |
| priorityDate |
2008-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |