| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4041308ea3ade882d3a401bd1d43edd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69b9c31c0fff193ec963582b322ee349
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9dffc46f89357a50bb02e6e5294f1f2a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2009-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9783f2b15820e5ee6d9eee3366ff6756
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f323207cdf58a45dc2d5d26609c1ab25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32089cd2630df8d13db6bca854b30ad6 |
| publicationDate |
2009-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009094325-A1 |
| titleOfInvention |
Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
| abstract |
A method for integrating low-temperature selective Ru metal deposition into manufacturing of semiconductor devices to improve el ectromig ration and stress migration in bulk Cu metal. The method includes providing a patterned substrate containing a recessed feature in a dielectric layer (304), where the recessed feature is at least substantially filled with planarized bulk Cu metal (322), heat-treating the bulk Cu metal and the dielectric layer in the presence of H2, N2 or NH3, or a combination thereof, and selectively depositing a Ru metal film (324) on the heat-treated planarized bulk Cu metal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11066743-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180003447-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102455123-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019118841-A1 |
| priorityDate |
2008-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |