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publicationDate 2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2009091013-A1
titleOfInvention Field effect transistor, semiconductor device and semiconductor device manufacturing method
abstract Disclosed is a field effect transistor provided with a semiconductor layer (109) which contains a source electrode (107a), a drain electrode (107b), a gate electrode (103), an insulating film (105) and crystalline oxide. The source electrode (107a) and the drain electrode (107b) are self-aligned with the gate electrode (103) with the insulating film (105) in between.
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