| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_76ba102ea9c02b6633d64bf09c5b89a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb447d9ad8678b6aa280b18a6f64e465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c031758801b92e8526f315cac28e2d03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd3de10f8a161dc698baa492729e6e6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8c8908a6220e166f82a022c07622ff6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-143 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0277 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2009-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a7cbb77026ae2430f19cb464a5445f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bbcb1345551b9fe7b6da4e1cac5d9bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb06217faadf981f294060421b313488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_208a86e590676d0c0bb653c09903ec89 |
| publicationDate |
2009-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009089158-A2 |
| titleOfInvention |
Functionalized fullerenes for nanolithography applications |
| abstract |
A method for electron beam nanolithography without the need for development step involves depositing a film of a resist comprising functionalized fullerenes on a substrate, and writing features by exposure to an electron beam with an accelerating voltage and dose rate sufficient to promote heating or thermal degradation of the functionalized fullerene in the irradiated volume such that a pattern is generated without a subsequent development step or with an aqueous developer. Lithographic features of about 1 nm or greater can be formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2933682-A4 |
| priorityDate |
2008-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |