| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_535e95972efb122b574bc3ac8b7cebf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ede3c505f324224e28753c54bd0e72c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f8c85db6395b6108e4257d0a9ad1530 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7371
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 |
| filingDate |
2008-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d69f3b6af8c0961b0be36747a94e82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f1a71546ca7cd3f3ef52acb6836ffaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c40c95e682eba6d6e597296e1d761ad |
| publicationDate |
2009-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009084241-A1 |
| titleOfInvention |
Semiconductor substrate, method for producing semiconductor substrate, and electronic device |
| abstract |
A high-quality GaAs crystal thin film is obtained by using a low-cost Si substrate having excellent heat dissipation characteristics. Specifically disclosed is a semiconductor substrate comprising an Si substrate, an inhibition layer formed on the substrate and inhibiting crystal growth, in which inhibition layer there are a covering region covering a part of the substrate and an opening region formed within the covering region and not covering the substrate, a Ge layer crystal-grwon in the opening region, a buffer layer crystal-grown on the Ge layer and composed of a P-containing group 3-5 compound semiconductor layer, and a functional layer crystal-grown on the buffer layer. In the semiconductor substrate, the Ge layer may be formed by annealing which is performed at such a temperature for such a time that crystal defects can move. |
| priorityDate |
2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |