| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f8c85db6395b6108e4257d0a9ad1530
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_535e95972efb122b574bc3ac8b7cebf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ede3c505f324224e28753c54bd0e72c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 |
| filingDate |
2008-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d69f3b6af8c0961b0be36747a94e82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f1a71546ca7cd3f3ef52acb6836ffaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c40c95e682eba6d6e597296e1d761ad |
| publicationDate |
2009-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009084239-A1 |
| titleOfInvention |
Semiconductor substrate, method for producing semiconductor substrate, and electronic device |
| abstract |
A high-quality GaAs crystal thin film is obtained by using a low-cost Si substrate having excellent heat dissipation characteristics. Specifically disclosed is a semiconductor substrate comprising an Si substrate, a Ge layer crystal-grown on the substrate and having an isolated island shape, a buffer layer crystal-grown on the Ge layer and composed of a P-containing group 3-5 compound semiconductor layer, and a functional layer crystal-grown on the buffer layer. The Ge layer is formed into an island shape which does not exceed twice the distance which crystal defects move when annealed at the annealing temperature and in the annealing time. Alternatively, the Ge layer is formed into an island shape which does not cause separation due to a stress caused by a difference in thermal expansion coefficient between the Ge layer and the Si substrate when annealed at the annealing temperature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8592292-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082817-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064928-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012056244-A1 |
| priorityDate |
2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |