| abstract |
An alkali-soluble resin is provided which contains no halogen atom in the molecule, has high sensitivity, and attains a wide margin of film thickness in pattern formation conducted using the same exposure amount and the same development period. The resin can be developed with the developing solution in general use in semiconductor device production steps (2.38% aqueous TMAH solution), is soluble in γ-butyrolactone, and is suitable for use in photosensitive resin compositions. This resin has, in the molecule, a structure represented by general formula (1): {wherein X1 represents a tetravalent organic group containing no halogen atom; and Z1 represents a divalent organic group represented by general formula (2): (wherein L1, L2, and L3 each independently represents hydrogen or methyl and L4 represents hydrogen, methyl, or hydroxy)}. |