| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2ca213f9b87467a428b40ac172af9f2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_50d60a229fd2c054c153a7888e7f9eb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a5a0023f98aaf5188f673483c6b63995
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ecbc6fec24836490f10648907299a483 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31654 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2008-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74e7e4ab46457a73ccfd4405f9f80c8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f25ffdde4fa032a57fd3e1761a2c50f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93f8eb5a87039a3e52ac44d5bd6305a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_685471369d79a51690dfc010f5503caa |
| publicationDate |
2009-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009062123-A2 |
| titleOfInvention |
Pitch reduction using oxide spacer |
| abstract |
A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber. |
| priorityDate |
2007-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |