http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009055450-A1

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publicationDate 2009-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2009055450-A1
titleOfInvention Adhesion improvement of dielectric barrier to copper by the addition of thin interface layer
abstract Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.
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