| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c038b75158bb29b49e1a5ed19bd1857d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72e8fa0710ddfc21f9de078f6944dbd6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bdd017fc9e31733088cc5608d9442165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c2b30be2de3a3dbdf3ea054b5f9309d1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2008-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4867cf216163f060d355647bae5226e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e0b33b472e4570fff2af43e46855d9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_139850e5dadfb13abd18786b1e4e9bc1 |
| publicationDate |
2009-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009051920-A1 |
| titleOfInvention |
Radiation-sensitive, wet developable bottom antireflective coating compositions and their applications in semiconductor manufacturing |
| abstract |
The present invention is directed to novel radiation-sensitive, wet developable bottom antireflective coating (DBARC) compositions and their use in semiconductor device manufacturing. The DBARC compositions contain a photoacid generator that produces a photoacid upon exposure to activating radiation. In a photolithographic imaging process, the relatively strong photoacid reduces or eliminates scumming. Further, the relatively large size of the photoacid limits its diffusion through the DBARC, thus minimizing or preventing undercut. The inventive method also limits diffusion of the photoacid by controlling the temperature of the post-exposure baking step. Use of the DBARC compositions with a photoresist in photolithography results in highly resolved features having essentially vertical profiles and no scumming and no undercut, which is critical as microelectronics and semiconductor components become increasingly miniaturized. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101820646-B1 |
| priorityDate |
2007-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |