| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0690e13290070471beed96c665dabf4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b809e16fc8e6cf409abc8b3376cda1d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0773052cdcaf0145e3bdca0021272186 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2008-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4200957b3d1edf87dbef6e89622d9025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1437b6b6453b23d459dd5642769b6c86 |
| publicationDate |
2009-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009042345-A1 |
| titleOfInvention |
Nand strings with offset charge storage layers and manufacturing method thereof |
| abstract |
A plurality of non- volatile storage elements on a common active layer are offset from neighbor non- volatile storage elements. This offsetting of non-volatile storage elements helps reduce interference from neighbor non-volatile storage elements. A method of manufacture is also described for fabricating the offset non-volatile storage elements. For example, a NAND string over active area (100) has a charge storage nitride layer (112) that is vertically offset to the charge storage layer (112) of the NAND string over active area (202). |
| priorityDate |
2007-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |