| abstract |
A phase change memory cell (1311) has a first electrode, a heater (1505), a phase change material, and a second electrode. The heater (1505) is over the first electrode, and the heater comprises a pillar. The phase change material (1701) is around the heater. The second electrode is electrically coupled to the phase change material. In some embodiments, a method includes forming a electrode layer over a substrate, depositing a first layer, providing nanoclusters (1411) over the first layer, and etching the first layer. The first layer comprises one of a group consisting of a heater material and a phase change material. The first layer may be etched using the nanocluster (1411) defined pattern to form pillars from the first layer. |