| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cc000b9419de6a89fb0e4251def8ae2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61d2b904f791fc547ced602b2a304312 |
| publicationDate |
2009-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2009025942-A1 |
| titleOfInvention |
Methods of forming through substrate interconnects |
| abstract |
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10685882-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8629060-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8034702-B2 |
| priorityDate |
2007-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |