http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009015192-A1

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publicationDate 2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2009015192-A1
titleOfInvention Methods for growing selective areas on substrates and devices thereof
abstract Methods for fabrication of semiconductor devices may form one or more retrograde well structures using one or more refractory or high growth temperature resistant materials. The retrograde well structure(s) may thus be used to provide selective growth using one or more growth materials and high temperature growth techniques, such as MBE, MOCVD, VPE, or MOMBE. Articles used for fabrication of semiconductor devices may include one or more retrograde well structures formed of refractory or high growth temperature resistant materials on a substrate or on a growth material on the substrate. Semiconductors, such as a heterojunction bipolar transistor (HBT), may be formed using the methods and/or articles described herein.
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