| abstract |
The present invention relates to a production process of a semiconductor on insulator type structure comprising a semiconductor layer (11) of a donor substrate (10), an insulator layer (60) and a receiver substrate (20), the process comprising the bonding of the donor substrate (10) on the receiver substrate (20), at least one of the substrates being coated with an insulator layer, characterised in that it comprises the formation at the bonding interface of a so-called trapping interface (30) comprising electrically active traps suitable for retaining charge carriers. The invention also relates to a semiconductor on insulator type structure comprising a trapping interface. |