| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e73d911a87d217023be97474eff276e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3bf8bf381e46484b6f09d0ff761b299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35f1bf7625ec038f633e972977ad7a70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_772617cd53a56d5bca6dbb143f2436ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5bd872d12ea5ec13dc1fc8b14eea532f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B9-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 |
| filingDate |
2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c4e51e8c39761891b55e0a677f8b3eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bd7c2f74498d2328e6af3cdd66fbd59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8a4422ce342ecfb291d9d3ded3f796f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3a8c46c91bc3d11c6a8c155013e83f8 |
| publicationDate |
2008-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008146865-A1 |
| titleOfInvention |
Method for production of ultraviolet light-emitting hexagonal boron nitride crystal |
| abstract |
Disclosed is a method which enables the synthesis of a highly pure hBN crystal on a robust substrate under ambient pressure in a simple manner. Specifically disclosed is a method for producing a hexagonal boron nitride crystal, which is characterized by comprising the steps of: preparing a mixture comprising a boron nitride raw material and a metal solvent comprising a transition metal; contacting the mixture with a sapphire substrate; heating the mixture; and recrystallizing a molten material produced by the heating step under ambient pressure. In the method, instead of using the sapphire substrate, a metal solvent may be used which comprises a transition metal selected from the group consisting of Fe, Ni and Co and any combination thereof and at least one substance selected from the group consisting of Cr, TiN and V. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2022071245-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7241247-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022071245-A1 |
| priorityDate |
2007-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |