| abstract |
A device comprising: a transistor comprising: at least one source; at least one drain; at least one channel; at least one gate insulator comprising (i) a first surface defining a first side, and (ii) a second surface defining a second side and opposing the first surface and first side, wherein the source and the drain are disposed on the gate insulator first side; at least one gate disposed on the gate insulator second side; wherein the source, the drain, or both comprise at least one polymer adsorbed to the source, drain, or both to minimize contact resistance between the source and the channel, the drain and the channel, or both. The polymer can comprise conjugated repeat units, can be a polythiopene, and also can be a regioregular polythiopene. |