| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94b3dbfd928fe47e1d2a2ee3454d3b72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e0f37c3b1f5a879c8996782cdae8cde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c153525772cb2a94f93ded9580e72cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2008-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d60366717568403101df8c6fa3e10427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d387248c0c648a969edadf24ea1bbd6 |
| publicationDate |
2008-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008128823-A1 |
| titleOfInvention |
Fabricating a contact rhodium structure by electroplating and electroplating composition |
| abstract |
A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011225991-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10648096-B2 |
| priorityDate |
2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |