http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008127425-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_45fe70967367ad89683129c650c1487a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbc56c0fcc83675776bc04e4ddfd6726 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B15-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J12-00 |
| filingDate | 2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbe86915912a7247a0ab016fb7210bd2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02e07070aec96fcb130e0a9b6e7988c8 |
| publicationDate | 2008-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2008127425-A3 |
| titleOfInvention | Abatement of reaction gases from gallium nitride deposition |
| abstract | Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment and methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material. |
| priorityDate | 2006-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.