| abstract |
This invention provides a coating solution for surface flat insulating film formation, produced by dissolving a poly(diorgano)siloxane (A) having a mass average molecular weight of not less than 900 and not more than 10000 and a metal alkoxide (B), in an organic solvent (C) and further adding water to the solution. The molar ratio of the poly(diorgano)siloxane (A) to the metal alkoxide (B), i.e., A/B is not less than 0.05 and not more than 1.5. The organic solvent (C) contains a hydroxyl group, the solubility of water in 100 g of the organic solvent (C) is 3 to 20 g, and the molar ratio of the organic solvent (C) to the poly(diorgano)siloxane (A), i.e., C/A, is 0.05 to 100. The coating solution for surface flat insulating film formation can form an organic modified silicate insulating film which is a thick film having a thickness of not less than 1 μm formed from a poly(diorgano)siloxane and a metal alkoxide, does not form concavoconvexes due to phase separation, has a low Young's modulus, has such a flexibility that can conform to the deformation of a substrate, and has a film surface flatness high enough to mount a microcomponent such as an electronic device thereon. |