Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8775fa6d443b5439358203c80801f4d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_253062bbf5239e9c012b00612630621a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c7d999bb6ab478a7ed29b45a75d9190d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-114 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-65 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 |
filingDate |
2008-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_963fbc93abadad5ac5822fed258bbee5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dae1f5e200c9d8859b769fa6d6ea26b |
publicationDate |
2008-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2008122778-A2 |
titleOfInvention |
Improvements in organic field-effect transistors |
abstract |
An organic field-effect transistor comprising: a source region; a drain region; one or more organic semiconductor layers disposed between the source and drain regions; a gate region; and a dielectric region disposed between the organic semiconductor layer(s) and the gate region; wherein the composition of the organic semiconductor layer(s) is such as to transport both electrons and holes, with the mobility of the holes being substantially equal to the mobility of the electrons such that the transistor substantially exhibits ambipolarity in its transfer characteristics. The organic field-effect transistor is preferably a light-sensing organic field-effect transistor. Numerous modifications to the composition and structure of organic field-effect transistors are also disclosed, as are examples of electro-optical switches, electro-optical logic circuits and image sensing arrays. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103179928-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012001454-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103179928-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106409886-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106409886-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9037251-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3456756-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9322713-B2 |
priorityDate |
2007-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |