Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eaa83fbca000e4ecf877e202edf3c202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c153525772cb2a94f93ded9580e72cd |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-31 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02 |
filingDate |
2008-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80e037ab25a14f6112c0e286d998f856 |
publicationDate |
2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2008104462-A1 |
titleOfInvention |
Rectifying element for a crosspoint based memory array architecture |
abstract |
An asymmetrically programmed memory material (such as a solid electrolyte material) is described for use as a rectifying element for driving symmetric or substantially symmetric resistive memory elements in a crosspoint memory architecture. A solid electrolyte element (SE) has very high resistance in the OFF state and very low resistance in the ON state (because it is a metallic filament in the ON state). These attributes make it a near ideal diode. During the passage of current (during program/read/erase) of the memory element, the solid electrolyte material also programs into the low resistance state. The final state of the solid electrolyte material is reverted to a high resistance state while making sure that the final state of the memory material is the one desired. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102077347-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010137339-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012513686-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8351244-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4778117-B2 |
priorityDate |
2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |