http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008091396-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72fa5091de4235436fca8d00d588e0fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a794eb404a7d31b516e089ad9b889ed4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-17 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-441 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 |
| filingDate | 2007-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9ad2d48ffa8e4a0f58efc5e475074d4 |
| publicationDate | 2008-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2008091396-A2 |
| titleOfInvention | Thermoelectric nanowire composites |
| abstract | An MOCVD process provides aligned p- and n- type nanowire arrays which are then filled with p- and n- type thermoelectric films to form the respective p-leg and n-leg of a thermoelectric device. The thermoelectric nanowire synthesis process is integrated with a photolithographic microfabrication process. The locations of the p- and n-type nanowire micro arrays are defined by photolithography. Metal contact pads at the bottom and top of these nanowire arrays which link the p- and n-type nanowires in series are defined and aligned by photolithography. |
| priorityDate | 2006-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.