| abstract |
Provided are a graphite material, which has excellent bonding characteristics to semiconductor and efficiently dissipates heat generated from the semiconductor, and a method for manufacturing such material. The graphite material is provided by adding at least two kinds of elements selected from among silicon, zirconium, calcium, titanium, chromium, manganese, iron, cobalt, nickel, calcium, yttrium, niobium, molybdenum, technetium, ruthenium and compounds containing such elements, and by performing heat treatment. The graphite material is characterized in having a thickness of the 112 face of the graphite crystal of 15nm or more by X-ray diffraction, and an average heat conductivity of 250W/(m·K) or more in the three directions of the X, Y and Z axes. |