http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008076812-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41ddc4b6d593e7e0ac261bc7558cd3d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_25edd95f9b020497e0795b3688b238d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3cb6facf80ab7dc2eee9d7b57237bfb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2007-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fd4cd80c0c9014322083512afff193d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4c2a8c862ae9c8687ca2e913c7afb63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5dd3caf1230b09d04f6d0f89c2e9438c |
| publicationDate | 2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2008076812-A2 |
| titleOfInvention | Methods for recess etching |
| abstract | Methods for recess etching are provided herein that advantageously improve lateral to vertical etch ratio requirements, thereby enabling deeper recess etching while maintaining relatively shallow vertical etch depths. Such enhanced lateral etch methods advantageously provide benefits for numerous applications where lateral to vertical etch depth ratios are constrained or where recesses or cavities are desired to be formed. In some embodiments, a method of recess etching includes providing a substrate having a structure formed thereon; forming a recess in the substrate at least partially beneath the structure using a first etch process; forming a selective passivation layer on the substrate; and extending the recess in the substrate using a second etch process. The selective passivation layer is generally formed on regions of the substrate adjacent to the structure but generally not within the recess. The first and second etch processes may be the same or different. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8118946-B2 |
| priorityDate | 2006-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.