| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dbfa35fb0a8853b5ae143c322d2e1e8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5823d4f5048879d07423779fa0883d6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d367dfddb0f532910f8735ca06b9a8b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00b12069bb62a52b8c946af459159a75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d0432476229aa86202b6e5bdff89e5e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2007-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6a57ccbc4d354e47d1796f9a37b2324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c476c1a73c5f42bb637dd69034853c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6db1d040cf858b0d9506259a0652aa7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaa8fa30afb21d4d8bb230c839aafa65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1be77cab3c0e6c755881ed8663e2c709 |
| publicationDate |
2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008061122-A2 |
| titleOfInvention |
Semiconductor device manufactured using an electrochemical deposition process for copper interconnects |
| abstract |
A method of manufacturing a semiconductor device (100) comprises forming an insulating layer (105) over a semiconductive substrate (110) and forming a copper interconnect. Forming the interconnect includes etching an interconnect opening in the insulating layer and filling the opening with copper plating. Filling with copper plating includes using a first and second electrochemical deposition (ECD). An electrolyte solution of the first and second electrochemical deposition contains organic additives, and a current of the first electrochemical deposition is greater than a current of the second electrochemical deposition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790232-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886229-B2 |
| priorityDate |
2006-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |