| abstract |
A method of and device for implanting semiconductor wafers with ions of N-type clusters of phosphorus (P) or arsenic (As), where the molecular cluster ions have the chemical form A-HX+o,r A-RHX', where A designates either arsenic or phosphorus, n and x are integers with n greater than or equal to 4, and x greater than or equal to 0, and R is a molecule not containing phosphorus or arsenic and which is not injurious to the implantation process These ions are produced from chemical compounds of the form AnHx and AnRHx. |