http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008054967-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c05beffcff6957bb314d2c084bf8086e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69aad234dbb89ba16a8df472ba51fba6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate | 2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02322824e36ff52882d32a62f01c049f |
| publicationDate | 2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2008054967-A2 |
| titleOfInvention | Method for providing a nanoscale, high electron mobility transistor (hemt) on insulator |
| abstract | A method and resulting high electron mobility transistor comprised of a substrate (801) and a relaxed silicon-germanium layer (805) formed over the substrate (801). A dopant layer is formed within the relaxed silicon-germanium layer (805). The dopant layer contains carbon and/or boron and has a full-width half-maximum (FWHM) thickness value of less than approximately 70 nanometers. A strained silicon layer (807) is formed over the relaxed silicon-germanium layer (805) and is configured to act as quantum well device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8530934-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8173526-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9012308-B2 |
| priorityDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.