| abstract |
Provided is a solar cell element manufacturing method by which a solar cell element can be more simply manufactured compared with conventional methods. On one main surface of a p-type conductivity semiconductor substrate, an n-type conductivity silicon thin film layer is formed, and after further forming a conductive layer on the silicon thin film layer, the conductive layer is melted with heat only at a positive electrode section. While maintaining pn junction between the semiconductor substrate and the n-type silicon thin film layer at a negative electrode section, formation of a p+ region on the semiconductor substrate and conductive connection between a conductive layer and the p+ region by formation of a contact section are performed at the same time at a positive electrode section. Thus, the solar cell element can be manufactured without troublesome processes of etching removal and regrowing of a p-type conductivity silicon thin film. |