| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_365a65fc29904c1b202d4244c62064c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_560f738c470c40912d0d1f9025cd85d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2df86751083be8491ccad7cd091d190e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-173
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0213 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate |
2007-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daf3b91bf3c9c980fc513b9a497abab6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c74ac374cbec36036a660726228d1af5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_118dbb5d05c44c432e7958d2aa6f78f2 |
| publicationDate |
2008-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008041586-A1 |
| titleOfInvention |
Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp |
| abstract |
Disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device having excellent emission characteristics with excellent productivity. Also disclosed are a group III nitride compound semiconductor light-emitting device and a lamp. Specifically disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device, wherein an intermediate layer (12) composed of at least a group III nitride compound is arranged on a substrate (11), and then an n-type semiconductor layer (14) comprising a foundation layer (14a), a light-emitting layer (15) and a p-type semiconductor layer (16) are sequentially arranged on the intermediate layer (12). This method comprises a pretreatment step for plasma processing the substrate (11) and a sputtering step following the pretreatment step for forming the intermediate layer (12) on the substrate (11) by a sputtering method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102597340-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102597340-A |
| priorityDate |
2006-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |