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filingDate 2007-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aff3e9272cd3d32917355858618cc5f2
publicationDate 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2008039593-A1
titleOfInvention Method for integrated substrate processing in copper metallization
abstract A method of copper metallization includes providing a patterned substrate (400, 600) containing a via (426, 626) and a trench (424, 624), and performing an integrated process on the patterned substrate (400, 600). The integrated process includes depositing a first metai-containing layer (428, 628) over the patterned substrate (400, 600), removing by sputter etching the first metal-containing layer (428, 628) from the bottom (426b, 626b) of the via (426, 626) and at least partially removing the first metal-containing layer (428, 628) from the bottom (424b, 624b) of the trench (424, 624), depositing a conformal Ru layer (432, 632) onto the sputter etched first metal- containing layer (428a, 628a), depositing a Cu alloying metal layer (434, 634) onto the conformal Ru layer (432, 632), and plating Cu over the patterned substrate (400, 600). According to one embodiment, the method can further include depositing a second metal-containing layer (430) onto the sputter etched first metal-containing layer (428a, 628a) prior to depositing the conformal Ru layer (432, 632). According to another embodiment, a Cu alloying metal may be deposited onto the plated Cu and the plated Cu annealed.
priorityDate 2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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