Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c8866eec47ed946faf95065c5aa48e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9d4e41190ce93793c1f31949bfa32b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d8b25f52c40d3c2cc1f410caba32fb31 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32131 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
filingDate |
2007-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_028d933c624c6a9d06bf7458024fc3ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_509ca1afeca926ad5c4230471485985c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3217a0941e72125bf9b16587821bc66 |
publicationDate |
2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2008036115-A1 |
titleOfInvention |
Novel structure and method for metal integration |
abstract |
An interconnect structure including a gouging feature at the bottom of one of the via openings and a method of forming the same are provided. In accordance with the present invention, the method of forming the interconnect structure does not disrupt the coverage of the deposited diffusion barrier in the overlying line opening, nor does it introduce damages caused by Ar sputtering into the dielectric material including the via and line openings. In accordance with the present invention, such an interconnect structure contains a diffusion barrier layer only within the via opening, but not in the overlying line opening. This feature enhances both mechanical strength and diffusion property around the via opening areas without decreasing volume fraction of conductor inside the line openings. In accordance with the present invention, such an interconnect structure is achieved by providing the gouging feature in the bottom of the via opening prior to formation of the line opening and deposition of the diffusion barrier in said line opening. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022186897-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011014904-A |
priorityDate |
2006-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |