| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8387c79560ae337a2e99e7bec75e7de5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7d9a06da4531613c5e7d34a45171d87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac19bc4dadb8de09cb65fc8bd40cdb91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d20c7a421027346b0f839c9ad997399b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2007-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbf735faa6b748a140a0f132d1ba2d36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec4b9ebc8dd4585c9770aca0cb4af253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e558bdc832a8e1bec82c10a09da147d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e47c3b09dd8c6c21deb36cc19aec1c09 |
| publicationDate |
2008-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008032794-A1 |
| titleOfInvention |
Cmp polishing agent, additive solution for cmp polishing agent, and method for polishing substrate by using the polishing agent and the additive solution |
| abstract |
Disclosed are: a CMP polishing agent comprising a cerium oxide particle, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer comprises a polymer produced by polymerizing a monomer comprising at least one of a carboxylic acid having an unsaturated double bond and a salt thereof by using a reductive inorganic acid salt and oxygen as redox polymerization initiators; an additive solution for the CMP polishing agent; and a method for polishing a substrate by using the CMP polishing agent and the additive solution. It becomes possible to achieve the polishing of a silicon oxide film with efficiency in the CMP technique for planarizing an interlayer insulating film, a BPSG film or an insulating film for the Shallow-Trench isolation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11649377-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200021519-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220066438-A |
| priorityDate |
2006-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |