| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa430f95e384deb50552a6387e1cf8a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4857d1cd980f2d3f6d558e6e2b24172e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_26f9d3caed4a8fb2be9db8df2ece3acb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cef1f43aa7ea51e6a592082d9f2a3103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57a1364066062646e2a299c609ccdead |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2007-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_087345463c08d83a4392064db2f701e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c2e4dfed9c06c967a08aa79d572e1c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27f510adb73f45e6c2f937e895d98005 |
| publicationDate |
2008-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008011688-A2 |
| titleOfInvention |
GROWTH OF MONOCRYSTALLINE GeN ON A SUBSTRATE |
| abstract |
The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550°C and 940°C, exposing the substrate (1 ) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1 ). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6936432-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008027131-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008027140-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160025781-A |
| priorityDate |
2006-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |