| abstract |
The present invention provides a method for forming conductive contacts (6, 7) on a substrate (1 ) comprising at least a Ge surface (3). The method comprises providing a GeN layer (4) in direct contact with the Ge surface (3), the GeN layer (4) having a thickness of between 0.1 nm and 100 nm and forming at least one conductive contact (6, 7) on top of the GeN layer (4) and in direct contact therewith. Forming a GeN layer (4) before forming the contacts (6, 7) allows forming contacts on Ge with an increased influence of the workf unction of the conductive material used to form the contacts (6, 7) on the barrier height of the contacts formed. The present invention also provides a structure comprising such conductive contacts (6, 7) and a semiconductor device comprising at least one structure having such conductive contacts (6, 7). |